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2N6344 Datasheet

  • 2N6344

  • Silicon Bidirectional Thyristors

  • 91.65KB

  • 8頁

  • ONSEMI

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2N6344, 2N6349
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full鈥搘ave silicon gate controlled solid鈥搒tate devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
鈥?/div>
Blocking Voltage to 800 Volts
鈥?/div>
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
鈥?/div>
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
鈥?/div>
Gate Triggering Guaranteed in all Four Quadrants
鈥?/div>
For 400 Hz Operation, Consult Factory
鈥?/div>
Device Marking: Logo, Device Type, e.g., 2N6344, Date Code
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
* Peak Repetitive Off鈥揝tate Voltage(1)
(TJ = 鈥?0 to +110擄C, Sine Wave 50 to
60 Hz, Gate Open)
2N6344
2N6349
*On鈥揝tate RMS Current
(TC = +80擄C)
Full Cycle Sine Wave 50 to 60 Hz
(TC = +90擄C)
*Peak Non鈥揜epetitive Surge Current
(One Full Cycle, Sine Wave 60 Hz,
TC = +25擄C)
Preceded and followed by rated current
Circuit Fusing Consideration (t = 8.3 ms)
*Peak Gate Power
(TC = +80擄C, Pulse Width = 2
碌s)
*Average Gate Power
(TC = +80擄C, t = 8.3 ms)
*Peak Gate Current
(TC = +80擄C, Pulse Width = 2.0
碌s)
*Peak Gate Voltage
(TC = +80擄C, Pulse Width = 2.0
碌s)
*Operating Junction Temperature Range
*Storage Temperature Range
Symbol
VDRM,
VRRM
600
800
IT(RMS)
8.0
4.0
ITSM
100
Amps
Amps
Value
Unit
Volts
1
http://onsemi.com
TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
MT2
G
MT1
4
2
3
TO鈥?20AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
1
I2t
PGM
PG(AV)
IGM
VGM
TJ
Tstg
40
20
0.5
2.0
10
鈥?40 to
+125
鈥?40 to
+150
A2s
Watts
Watt
2
3
4
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
ORDERING INFORMATION
Amps
Volts
擄C
擄C
Preferred
devices are recommended choices for future use
and best overall value.
Device
2N6344
2N6349
Package
TO220AB
TO220AB
Shipping
500/Box
500/Box
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
漏
Semiconductor Components Industries, LLC, 1999
1
March, 2000 鈥?Rev. 1
Publication Order Number:
2N6344/D

2N6344 產(chǎn)品屬性

  • ON Semiconductor

  • 雙向可控硅

  • 600 V

  • 100 A

  • 10 uA

  • 2 V

  • 50 mA

  • 40 mA

  • 1.55 V

  • Through Hole

  • TO-220-3

  • Box

  • + 125 C

  • - 40 C

  • 600 V

  • 500

2N6344相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | PNP | 75V V(BR)CEO | 10A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 75V V(BR)CEO | 10A I(C) | TO-3
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-9
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-9
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-9
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
  • 英文版
    Power Transistors
    CENTRAL
  • 英文版
    PNP DARLINGTON POWER SILICON TRANSISTOR
    MICROSEMI
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    BOCA
  • 英文版
    POWER TRANSISTORS(8A, 75W)
    MOSPEC
  • 英文版
    Silicon NPN Power Transistors
    ISC [Incha...
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    BOCA [Boca...
  • 英文版
    POWER TRANSISTORS(8A, 75W)
    MOSPEC [Mo...
  • 英文版
    Power Transistors
    CENTRAL [C...
  • 英文版
    PNP DARLINGTON POWER SILICON TRANSISTOR
    MICROSEMI ...
  • 英文版
    Power Transistors
    CENTRAL
  • 英文版
    PNP DARLINGTON POWER SILICON TRANSISTOR
    MICROSEMI

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