鈥?/div>
Fast Switching Times @ I
C
= 10 Adc
t
r
= 0.3 ms (Max)
t
s
= 1.0 ms (Max)
t
f
= 0.25 ms (Max)
*MAXIMUM RATINGS
Rating
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current
Continuous
Peak
Base Current
Symbol
V
CB
V
EB
I
C
V
CEO
2N6338
120
100
2N6338
2N6341*
*ON Semiconductor Preferred Device
25 AMPERE
POWER TRANSISTORS
NPN SILICON
100, 120, 140, 150 VOLTS
200 WATTS
PD, POWER DISSIPATION (WATTS)
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2N6341
180
150
Unit
Vdc
Vdc
Vdc
Adc
Collector鈥揈mitter Voltage
6.0
25
50
10
I
B
Adc
Total Device Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
200
1.14
Watts
W/擄C
_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
鈥?5 to +200
CASE 1鈥?7
TO鈥?04AA
(TO鈥?)
THERMAL CHARACTERISTICS
Characteristic
Symbol
胃
JC
Max
Unit
Thermal Resistance, Junction to Case
*Indicates JEDEC Registered Data.
200
175
150
125
100
75
50
25
0
0
0.875
_C/W
25
50
75
100
125
150
175
200
T
C
, CASE TEMPERATURE (擄C)
Figure 1. Power Derating
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
May, 2001 鈥?Rev. 10
Publication Order Number:
2N6338/D
1
2
3
4
