TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/540
Devices
2N6298
2N6299
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation @ T
C
= 0
0
C
(1)
@
T
C
= 100
0
C
Operating & Storage Junction Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
OP
,
T
STG
Symbol
R
胃
JC
2N6298 2N6299
60
60
80
80
Units
Vdc
Vdc
Vdc
mAdc
Adc
W
W
0
C
Unit
C/W
5.0
120
8.0
75
32
-65 to +175
Max.
2.33
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 0.428 W/
0
C above T
C
> 0
0
C
0
TO-66* (TO-213AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
Collector-Emitter Cutoff Current
V
CE
= 30 Vdc
V
CE
= 40 Vdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc, V
BE
= 1.5 Vdc
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
2N6298
2N6299
2N6298
2N6299
2N6298
2N6299
V
(BR)
CEO
60
80
0.5
0.5
0.5
0.5
2.0
Vdc
I
CEO
mAdc
I
CEX
I
EBO
mAdc
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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