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TO鈥?20AB Compact Package
2N6292*
*ON Semiconductor Preferred Device
7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
30鈥?0鈥?0 VOLTS
40 WATTS
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*MAXIMUM RATINGS
Rating
Symbol
VCEO
VCB
VEB
IC
IB
PD
2N6111
2N6288
30
40
2N6109
50
60
2N6107
2N6292
70
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
5.0
7.0
10
3.0
Collector Current 鈥?Continuous
Peak
Base Current
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
40
0.32
Watts
W/_C
_C
TJ, Tstg
鈥?5 to +150
4
1
2
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
3
CASE 221A鈥?9
TO鈥?20AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Max
Unit
Thermal Resistance, Junction to Case
*Indicates JEDEC Registered Data.
3.125
_C/W
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2002
1
April, 2002 鈥?Rev. 5
Publication Order Number:
2N6107/D