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Monolithic Construction with Built鈥揑n Base鈥揈mitter Shunt
Resistors
PD, POWER DISSIPATION (WATTS)
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Rating
Symbo
l
V
CEO
V
CB
V
EB
I
C
I
B
*MAXIMUM RATINGS
2N6283
2N6286
80
80
2N6284
2N6287
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
5.0
20
40
Collector Current 鈥?Continuous
Peak
Base Current
0.5
Total Device Dissipation @ T
C
=
25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
P
D
160
0.915
Watts
W/_C
_C
CASE 1鈥?7
TO鈥?04AA
(TO鈥?)
T
J
,T
stg
鈥?5 to +200
*THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Max
Unit
Thermal Resistance, Junction to Case
1.09
_C/W
*Indicates JEDEC Registered Data.
160
140
120
100
80
60
40
20
0
0
25
50
100
125
75
150
T
C
, CASE TEMPERATURE (擄C)
175
200
Figure 1. Power Derating
漏
Semiconductor Components Industries, LLC, 2001
1
May, 2001 鈥?Rev. 1
Publication Order Number:
2N6284/D