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2N6284_06 Datasheet

  • 2N6284_06

  • Darlington Complementary Silicon Power Transistors

  • 155.85KB

  • 7頁(yè)

  • ONSEMI

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ON Semiconductort
NPN
Darlington Complementary
Silicon Power Transistors
. . . designed for general鈭抪urpose amplifier and low鈭抐requency
switching applications.
2N6283
2N6284
PNP
鈥?/div>
High DC Current Gain @ I
C
= 10 Adc
鈭?/div>
2N6286
2N6287
DARLINGTON
20 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
100 VOLTS
160 WATTS
h
FE
= 2400 (Typ)
鈭?/div>
2N6284
= 4000 (Typ)
鈭?/div>
2N6287
鈥?/div>
Collector鈭扙mitter Sustaining Voltage
鈭?/div>
V
CEO(sus)
= 100 Vdc (Min)
鈥?/div>
Monolithic Construction with Built鈭捍n Base鈭扙mitter Shunt Resistors
w
These devices are available in Pb鈭抐ree package(s). Specifications herein
apply to both standard and Pb鈭抐ree devices. Please see our website at
www.onsemi.com for specific Pb鈭抐ree orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
Symbo
l
V
CEO
V
CB
V
EB
I
C
I
B
PD, POWER DISSIPATION (WATTS)
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Rating
*MAXIMUM RATINGS
2N6283
2N6286
80
80
2N6284
2N6287
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈭扙mitter Voltage
Collector鈭払ase Voltage
Emitter鈭払ase Voltage
5.0
20
40
Collector Current
鈭?/div>
Continuous
Peak
Base Current
0.5
CASE 1鈭?7
TO鈭?04AA
(TO鈭?)
Total Device Dissipation @ T
C
=
25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
P
D
160
0.915
Watts
W/_C
_C
T
J
,T
stg
鈭?5
to + 200
*THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Max
Unit
Thermal Resistance, Junction to Case
*Indicates JEDEC Registered Data.
1.09
_C/W
160
140
120
100
80
60
40
20
0
0
25
75
150
50
100
125
T
C
, CASE TEMPERATURE (擄C)
1
175
200
Figure 1. Power Derating
漏
Semiconductor Components Industries, LLC, 2006
March, 2006
鈭?/div>
Rev. 2
Publication Order Number:
2N6284/D

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