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2N6275 Datasheet

  • 2N6275

  • POWER TRANSISTORS NPN SILICON

  • 172.33KB

  • 6頁

  • ONSEMI

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6274/D
High-Power NPN Silicon
Transistors
. . . designed for use in industrial鈥搈ilitary power amplifer and switching circuit
applications.
鈥?/div>
High Collector Emitter Sustaining 鈥?/div>
VCEO(sus) = 100 Vdc (Min) 鈥?2N6274
VCEO(sus)
= 120 Vdc (Min) 鈥?2N6275
VCEO(sus)
= 150 Vdc (Min) 鈥?2N6277
鈥?/div>
High DC Current Gain 鈥?/div>
hFE = 30鈥?20 @ IC = 20 Adc
hFE
= 10 (Min) @ IC = 50 Adc
鈥?/div>
Low Collector鈥揈mitter Saturation Voltage 鈥?/div>
VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc
鈥?/div>
Fast Switching Times @ IC 20 Adc
tr = 0.35
碌s
(Max)
ts = 0.8
碌s
(Max)
tf = 0.25
碌s
(Max)
鈥?/div>
Complement to 2N6377鈥?9
MAXIMUM RATINGS(1)
Rating
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
2N6274
2N6275
2N6277*
*Motorola Preferred Device
50 AMPERE
POWER TRANSISTORS
NPN SILICON
100, 120, 140, 150 VOLTS
250 WATTS
PD, POWER DISSIPATION (WATTS)
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Symbol
VCB
VCEO
VEB
IC
IB
PD
2N6274
120
100
2N6275
140
120
6.0
2N6277
180
150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector Current 鈥?Continuous
Peak
Base Current
50
100
20
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
Operating and Storage Junction
Temperature Range
250
1.43
Watts
W/
_
C
TJ, Tstg
鈥?65 to + 200
CASE 197A鈥?5
TO鈥?04AE
(TO鈥?)
_
C
THERMAL CHARACTERISTIC
Characteristic
Symbol
胃
JC
Max
0.7
Unit
Thermal Resistance, Junction to Case
(1) Indicates JEDEC Registered Data.
250
_
C/W
200
150
100
50
0
0
25
50
100
125
150
75
TC, CASE TEMPERATURE (擄C)
175
200
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 7
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1

2N6275 產(chǎn)品屬性

  • 0現(xiàn)貨查看交期

  • 100 : ￥825.67690散裝

  • *

  • 散裝

  • 在售

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