DISCRETE POWER & SIGNAL
TECHNOLOGIES
2N6076
SILICON PNP SMALL SIGNAL TRANSISTOR
BV
CEO
. . . . 25 V (Min)
h
FE
. . . . 100 (Min) @ V
CE
= 10 V, I
C
= 10 mA
1
B
2
C
3
E
0.175 - 0.185
(4.450 - 4.700)
LOGO
XYY
1
2
3
0.135 - 0.145
(3.429 - 3.683)
ABSOLUTE MAXIMUM RATINGS
(NOTE 1)
TEMPERATURES
Storage Temperature
-55 Degrees C to
Operating Junction Temperature
POWER DISSIPATION
(NOTES 2 & 3)
Total Device Dissipation at TA = 25 Deg C
VOLTAGES & CURRENT
V
CEO
Collector to Emitter
V
CBO
Collector to Base
V
EBO
Emitter to Base
I
C
Collector Current
150 Degrees C
150 Degrees C
2N
6076
0.175 - 0.185
(4.450 - 4.700)
SEATING
625 mW
0.500
(12.70)
PLANE
MIN
25 V
25 V
5V
500 mA
0.016 - 0.021
(0.410- 0.533)
0.045 - 0.055
(1.143- 1.397)
0.095 - 0.105
(2.413 - 2.667)
ELECTRICAL CHARACTERISTICS
(25 Degrees C Ambient Temperature unless otherwise stated)
SYM
B
VCBO
B
VCEO
B
VEBO
I
CBO
I
CES
I
EBO
h
FE
V
CE(
sat
)
V
BE(
sat
)
V
BE
(on)
CHARACTERISTICS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base -Emitter On Voltage
MIN MAX
25
25
5
100
10
100
100
100
500
0.25
0.8
0.5
1.2
UNITS
V
V
V
nA
uA
nA
uA
V
V
V
TEST CONDITIONS
I
C
=
I
C
=
I
E
=
100 uA
10 mA
10 uA
V
CB
= 25 V
V
CB
= 25 V , T=+100擄C
V
CE
= 25 V
V
EB
= 3.0 V
V
CE
= 10 V
I
C
= 10 mA
I
C
= 10mA I
B
= 1.0mA
I
C
= 10mA I
B
= 1.0mA
V
CE
= 10 V
I
C
= 10mA
漏1998
Fairchild Semiconductor Corporation
2n6076.ppt6894 revA
1
2
3
