2N6071B Datasheet

IC型號(hào)：
2N6071B
PDF描述：
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS
文件大?。?/label>
121.90KB
PDF頁數(shù)：
6頁
芯片廠家：
MOTOROLA

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by 2N6071/D

Sensitive Gate Triacs

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers,

motor controls, heating controls and power supplies; or wherever full-wave silicon

gate controlled solid-state devices are needed. Triac type thyristors switch from a

blocking to a conducting state for either polarity of applied anode voltage with positive

or negative gate triggering.

鈥?/div>

Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL,

CMOS and Operational Amplifier Integrated Circuit Logic Functions

鈥?/div>

Gate Triggering 4 Mode 鈥?2N6071A,B, 2N6073A,B, 2N6075A,B

鈥?/div>

Blocking Voltages to 600 Volts

鈥?/div>

All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity

and Stability

鈥?/div>

Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat

Dissipation and Durability

2N6071A,B*

2N6073A,B*

2N6075A,B*

*Motorola preferred devices

TRIACs

4 AMPERES RMS

200 thru 600 VOLTS

MT1

MT2

MT2 MT1

CASE 77-08

(TO-225AA)

STYLE 5

MAXIMUM RATINGS

(TJ = 25擄C unless otherwise noted.)

Rating

*Peak Repetitive Off-State Voltage(1)

(Gate Open, TJ = 25 to 110擄C)

2N6071A,B

2N6073A,B

2N6075A,B

IT(RMS)

ITSM

I2t

PGM

PG(AV)

VGM

Symbol

VDRM

200

400

600

3.7

0.5

Amps

A2s

Watts

Watt

Volts

Value

Unit

Volts

*On-State Current RMS (TC = 85擄C)

*Peak Surge Current

(One Full cycle, 60 Hz, TJ = 鈥?0 to +110擄C)

Circuit Fusing Considerations

(t = 8.3 ms)

*Peak Gate Power

*Average Gate Power

*Peak Gate Voltage

*Indicates JEDEC Registered Data.

1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Preferred

devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola Thyristor Device Data

漏

Motorola, Inc. 1998

制造商
ON Semiconductor
產(chǎn)品種類
雙向可控硅
額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM
200 V
最大轉(zhuǎn)折電流 IBO
30 A
關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）
10 uA
柵觸發(fā)電壓 (Vgt)
2.5 V
柵觸發(fā)電流 (Igt)
5 mA
保持電流（Ih 最大值）
15 mA
正向電壓下降
2 V
安裝風(fēng)格
Through Hole
封裝 / 箱體
TO-225-3
封裝
Box
最大工作溫度
+ 110 C
最小工作溫度
- 40 C
重復(fù)峰值正向閉塞電壓
200 V
工廠包裝數(shù)量
500

2N6071B相關(guān)型號(hào)PDF文件下載

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TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-92VA...

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TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 500MA I(C) | TO-92VA...

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TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 500MA I(C) | TO-92VA...

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2N6071B Datasheet

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