廬
2N6059
SILICON NPN POWER DARLINGTON TRANSISTOR
s
s
s
s
s
s
STMicrolectronics PREFERRED
SALESTYPE
HIGH GAIN
NPN DARLINGTON
HIGH CURRENT
HIGH DISSIPATION
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
1
2
TO-3
APPLICATIONS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N6059 is a silicon Epitaxial-Base NPN
transistor in monolithic Darlington configuration
mounted in Jedec TO-3 metal case.
It is inteded for use in power linear and low
frequency switching applications.
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ. = 6 K鈩?/div>
R
2
Typ. = 55
鈩?/div>
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
Parameter
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (V
BE
= -1.5V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Total Dissipation at T
c
鈮?/div>
25 C
Storage Temperature
Max. Operating Junction Temperature
o
Value
100
100
100
5
12
20
0.2
150
-65 to 200
200
Unit
V
V
V
V
A
A
A
W
o
o
C
C
February 2003
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