鈥?/div>
Monolithic Construction with Built鈥揑n Base鈥揈mitter Shunt Resistors
DARLINGTON
8 AMPERE
SILICON
POWER TRANSISTOR
80 VOLTS
100 WATTS
PD, POWER DISSIPATION (WATTS)
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MAXIMUM RATINGS (1)
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Rating
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
Max
80
80
Unit
Vdc
Vdc
Vdc
Adc
5.0
8.0
16
Collector Current 鈥?Continuous
Peak
Base Current
120
mAdc
Watts
W/_C
_C
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
P
D
100
0.571
Operating and Storage Junction Temperature
Range
T
J
, T
stg
鈥?5 to +200
CASE 1鈥?7
TO鈥?04AA
(TO鈥?)
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Max
Unit
Thermal Resistance, Junction to Case
1.75
_C/W
(1) Indicates JEDEC Registered Data
100
80
60
40
20
0
0
25
50
75
100
125
T
C
, TEMPERATURE (擄C)
150
175
200
Figure 1. Power Derating
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 2
Publication Order Number:
2N6056/D
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