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Monolithic Construction with Built鈥揑n Base鈥揈mitter Shunt Resistors
MAXIMUM RATINGS (1)
Rating
PD, POWER DISSIPATION (WATTS)
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Symbol
V
CEO
V
CB
V
EB
I
C
I
B
2N6058
80
80
2N6052
2N6059
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase voltage
5.0
12
20
Collector Current 鈥?Continuous
Peak
Base Current
0.2
Total Device Dissipation
@T
C
= 25_C
Derate above 25_C
P
D
150
Watts
W/_C
_C
0.857
Operating and Storage Junction
Temperature Range
T
J
, T
stg
鈥?5 to +200_C
DARLINGTON
12 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80鈥?00 VOLTS
150 WATTS
CASE 1鈥?7
TO鈥?04AA
(TO鈥?)
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Rating
1.17
Unit
Thermal Resistance, Junction to Case
_C/W
(1) Indicates JEDEC Registered Data.
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (擄C)
175
200
Figure 1. Power Derating
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 2
Publication Order Number:
2N6052/D