鈥?/div>
Monolithic Construction with Built鈭捍n Base鈭扙mitter Shunt Resistors
2N6058
2N6059*
*ON Semiconductor Preferred Device
w
These devices are available in Pb鈭抐ree package(s). Specifications herein
apply to both standard and Pb鈭抐ree devices. Please see our website at
www.onsemi.com for specific Pb鈭抐ree orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
2N6052
2N6059
100
100
MAXIMUM RATINGS (1)
Rating
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
2N6058
80
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
DARLINGTON
12 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80
鈭?00
VOLTS
150 WATTS
PD, POWER DISSIPATION (WATTS)
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Collector鈭扙mitter Voltage
Collector鈭払ase Voltage
Emitter鈭払ase voltage
5.0
12
20
Collector Current 鈥?Continuous
Peak
Base Current
Total Device Dissipation
@T
C
= 25_C
Derate above 25_C
0.2
P
D
150
Watts
W/_C
_C
0.857
Operating and Storage Junction
Temperature Range
T
J
, T
stg
鈥?65 to + 200_C
CASE 1鈭?7
TO鈭?04AA
(TO鈭?)
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Rating
1.17
Unit
Thermal Resistance, Junction to Case
_C/W
(1) Indicates JEDEC Registered Data.
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (擄C)
175
200
Figure 1. Power Derating
1
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2006
March, 2006
鈭?/div>
Rev. 3
Publication Order Number:
2N6052/D
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