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Monolithic Construction with Built鈥揑n Base鈥揈mitter Shunt Resistors
2N6040
thru
2N6042 *
NPN
2N6043
thru
2N6045*
*ON Semiconductor Preferred Device
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Rating
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
2N6040
2N6043
60
60
2N6041
2N6044
80
80
2N6042
2N6045
100
100
Unit
Vdc
Vdc
Vdc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
5.0
8.0
16
Collector Current 鈥?Continuous
Peak
Base Current
120
mAdc
Watts
W/_C
_C
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction,
Temperature Range
Characteristic
P
D
75
0.60
T
J
, T
stg
鈥?5 to +150
MAXIMUM RATINGS (1)
DARLINGTON
8 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60鈥?0鈥?00 VOLTS
75 WATTS
THERMAL CHARACTERISTICS
Symbol
胃
JC
胃
JA
Max
57
Unit
Thermal Resistance, Junction to Case
1.67
_C/W
_C/W
CASE 221A鈥?9
TO鈥?20AB
Thermal Resistance, Junction to Ambient
(1) Indicates JEDEC Registered Data.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 3
Publication Order Number:
2N6040/D