廬
2N5886
HIGH CURRENT SILICON NPN POWER TRANSISTOR
s
s
STMicroelectronics PREFERRED
SALESTYPE
HIGH CURRENT CAPABILITY
APPLICATIONS
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N5886 is a silicon Epitaxial-Base NPN
power transistor mounted in Jedec TO-3 metal
case. It is inteded for use in power linear
amplifiers and switching applications.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
Parameter
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
c
鈮?/div>
25
o
C
Storage Temperature
Max. Operating Junction Temperature
Value
80
80
5
25
50
7.5
200
-65 to 200
200
Unit
V
V
V
A
A
A
W
o
o
C
C
January 2000
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