2N5884
2N5886
COMPLEMENTARY SILICON
HIGH POWER TRANSISTORS
s
s
s
SGS-THOMSON PREFERRED SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
HIGH CURRENT CAPABILITY
APPLICATIONS
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N5884 and 2N5886 are complementary
silicon power transistor in Jedec TO-3 metal case
inteded for use in power linear amplifiers and
switching applications.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
PNP
NPN
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
c
鈮?/div>
25
o
C
Storage Temperature
Max. Operating Junction Temperature
Value
2N5884
2N5886
80
80
5
25
50
7.5
200
-65 to 200
200
V
V
V
A
A
A
W
o
o
Unit
C
C
For PNP types voltage and current values are negative.
June 1997
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