High Current Gain Bandwidth Product 鈥?/div>
f
蟿
= 4.0 MHz (min) at I
C
= 1.0 Adc
MAXIMUM RATINGS (1)
Rating
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
2N5883
2N5885
60
60
2N5884
2N5886
80
80
25 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60鈥?0 VOLTS
200 WATTS
PD, POWER DISSIPATION (WATTS)
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Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
5.0
25
50
Collector Current 鈥?Continuous
Peak
Base Current
7.5
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
P
D
200
1.15
Watts
W/_C
_C
T
J
, T
stg
鈥?5 to +200
CASE 1鈥?7
TO鈥?04AA
(TO鈥?)
THERMAL CHARACTERISTICS
Characteristic
Symbol
胃
JC
Max
Unit
Thermal Resistance, Junction to Case
0.875
_C/W
(1) Indicates JEDEC registered data. Units and conditions differ on some parameters and
re鈥搑egistration reflecting these changes has been requested. All above values most or
exceed present JEDEC registered data.
200
175
150
125
100
75
50
25
0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (擄C)
175
200
Figure 1. Power Derating
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 9
Publication Order Number:
2N5883/D
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3
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5
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7
8
