High Current 鈥?Gain鈥揃andwidth Product 鈥?/div>
f
T
= 4.0 MHz (Min) @ I
C
= 1.0 Adc
15 AMPERE
SILICON
POWER TRANSISTOR
80 VOLTS
160 WATTS
PD, POWER DISSIPATION (WATTS)
脦 脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦
脦 脦
脦
脦 脦
脦 脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦 脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦 脦 脦
脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦脦脦脦 脦 脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦 脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
MAXIMUM RATINGS (1)
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Rating
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
Max
80
80
15
30
Unit
Vdc
Vdc
Vdc
Adc
Adc
5.0
Collector Current 鈥?Continuous
Peak
Base Current
5.0
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
P
D
160
0.915
Watts
W/_C
_C
T
J
, T
stg
鈥?5 to +200
CASE 1鈥?7
TO鈥?04AA
(TO鈥?)
THERMAL CHARACTERISTICS
Characteristic
Symbol
胃
JC
Max
1.1
Unit
Thermal Resistance, Junction to Case
_C/W
(1) Indicates JEDEC registered data. Units and conditions differ on some parameters and
re鈥搑egistration reflecting these changes has been requested. All above values meet or
exceed present JEDEC registered data.
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (擄C)
175
200
Figure 1. Power Derating
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 2
Publication Order Number:
2N5882/D