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Through Hole Package
omponents
21201 Itasca Street Chatsworth
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2N5832
Plastic-case Bipolar
NPN Transistor
C
B
E
Pin Configuration
Bottom View
Electrical Characteristics @ 25擄C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=300mAdc)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Breakdown Current
(V
CE
=120Vdc)
Min
140
160
5.0
50
Max
Units
A
Vdc
Vdc
Vdc
nAdc
TO-92
E
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
B
ON CHARACTERISTICS
h
FE
DC Current Gain*
C
175
(I
C
=10mAdc, V
CE
=5.0Vdc)
500
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=10mAdc)
0.2
Vdc
D
SMALL-SIGNAL CHARACTERISTICS
f
T
C
ob
NF
Current Gain-Bandwidth Product
(I
C
=10mAdc)
Output Capacitance
Noise Figure
----
dB
DIM
A
B
C
D
E
G
INCHES
MIN
.175
.175
.500
.016
.135
.095
DIMENSIONS
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
100
4.0
MHz
pF
G
Note
:
Maximum at typical JEDEC condition
V
(BR)CER
@ R=10 OHMS
MAX
.185
.185
---
.020
.145
.105
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
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