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2N5684 Datasheet

  • 2N5684

  • High-Current Complementary Silicon Power Transistors

  • 134.63KB

  • 8頁

  • ONSEMI

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上傳產(chǎn)品規(guī)格書

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ON Semiconductort
PNP
High-Current Complementary
Silicon Power Transistors
. . . designed for use in high鈥損ower amplifier and switching circuit
applications.
2N5684
2N5686
50 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60鈥?0 VOLTS
300 WATTS
NPN
鈥?/div>
High Current Capability 鈥?/div>
I
C
Continuous = 50 Amperes.
鈥?/div>
DC Current Gain 鈥?/div>
h
FE
= 15鈥?0 @ I
C
= 25 Adc
鈥?/div>
Low Collector鈥揈mitter Saturation Voltage 鈥?/div>
V
CE(sat)
= 1.0 Vdc (Max) @ I
C
= 25 Adc
PD, POWER DISSIPATION (WATTS)
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MAXIMUM RATINGS (1)
Rating
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
2N5684
2N5686
80
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
5.0
50
15
Collector Current 鈥?Continuous
Base Current
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
P
D
300
1.715
Watts
W/_C
_C
T
J
, T
stg
鈥?5 to +200
CASE 197A鈥?5
TO鈥?04AE
THERMAL CHARACTERISTICS (1)
Characteristic
Symbol
JC
Max
Unit
Thermal Resistance, Junction to Case
0.584
_C/W
(1) Indicates JEDEC Registered Data.
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140
TEMPERATURE (擄C)
160
180
200
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
Semiconductor Components Industries, LLC, 2001
1
May, 2001 鈥?Rev. 10
Publication Order Number:
2N5684/D

2N5684 產(chǎn)品屬性

  • 100

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • PNP

  • 50A

  • 80V

  • 5V @ 10A,50A

  • 1mA

  • 15 @ 25A,2V

  • 300mW

  • 2MHz

  • 通孔

  • TO-204AE

  • TO-3

  • 托盤

  • 2N5684OS

2N5684相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-29
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-29
  • 英文版
    TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-3
  • 英文版
    Bipolar PNP Device in a Hermetically sealed TO66 Metal Packa...
    SEME-LAB
  • 英文版
    Silicon NPN Power Transistors
    ISC [Incha...
  • 英文版
    Silicon NPN Power Transistors
    SAVANTIC [...
  • 英文版
    Bipolar PNP Device in a Hermetically sealed TO66 Metal Packa...
    SEME-LAB [...
  • 英文版
    Bipolar PNP Device in a Hermetically sealed TO66 Metal Packa...
    SEME-LAB
  • 英文版
    Silicon PNP Power Transistors
    ISC [Incha...
  • 英文版
    Silicon PNP Power Transistors
    SAVANTIC [...
  • 英文版
    Bipolar PNP Device in a Hermetically sealed TO66 Metal Packa...
    SEME-LAB [...
  • 英文版
    TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | TO-66
    ETC
  • 英文版
    Bipolar NPN Device in a Hermetically sealed TO66 Metal Packa...
    SEME-LAB
  • 英文版
    Silicon NPN Power Transistors
    ISC [Incha...
  • 英文版
    Silicon NPN Power Transistors
    SAVANTIC [...
  • 英文版
    Bipolar NPN Device in a Hermetically sealed TO66 Metal Packa...
    SEME-LAB [...
  • 英文版
    Bipolar PNP Device in a Hermetically sealed TO66 Metal Packa...
    SEME-LAB
  • 英文版
    Silicon PNP Power Transistors
    ISC [Incha...
  • 英文版
    Silicon PNP Power Transistors
    SAVANTIC [...

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