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2N5684_06 Datasheet

  • 2N5684_06

  • High−Current Complementary Silicon Power Transistors

  • 7頁

  • ONSEMI

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上傳產(chǎn)品規(guī)格書

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ON Semiconductort
High鈭扖urrent Complementary
Silicon Power Transistors
. . . designed for use in high鈭抪ower amplifier and switching circuit
applications.
PNP
2N5684
NPN
2N5686
50 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60
鈭?0
VOLTS
300 WATTS
鈥?/div>
High Current Capability
鈭?/div>
I
C
Continuous = 50 Amperes.
鈥?/div>
DC Current Gain
鈭?/div>
h
FE
= 15鈭?0 @ I
C
= 25 Adc
鈥?/div>
Low Collector鈭扙mitter Saturation Voltage
鈭?/div>
V
CE(sat)
= 1.0 Vdc (Max) @ I
C
= 25 Adc
w
These devices are available in Pb鈭抐ree package(s). Specifications herein
apply to both standard and Pb鈭抐ree devices. Please see our website at
www.onsemi.com for specific Pb鈭抐ree orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
PD, POWER DISSIPATION (WATTS)
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MAXIMUM RATINGS (1)
Rating
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
2N5684
2N5686
80
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈭扙mitter Voltage
Collector鈭払ase Voltage
Emitter鈭払ase Voltage
5.0
50
15
Collector Current
鈭?/div>
Continuous
Base Current
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
P
D
300
1.715
Watts
W/_C
_C
T
J
, T
stg
鈭?5
to + 200
CASE 197A鈭?5
TO鈭?04AE
THERMAL CHARACTERISTICS (1)
Characteristic
Thermal Resistance, Junction to Case
Symbol
胃
JC
Max
Unit
0.584
_C/W
(1) Indicates JEDEC Registered Data.
300
250
200
150
100
50
0
0
20
40
60
Figure 1. Power Derating
1
80 100 120 140
TEMPERATURE (擄C)
160
180
200
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
漏
Semiconductor Components Industries, LLC, 2006
March, 2006
鈭?/div>
Rev. 11
Publication Order Number:
2N5684/D

2N5684_06相關(guān)型號PDF文件下載

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