TECHNICAL DATA
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
Devices
2N5664
2N5665
Qualified Level
JAN
JANTX
JANTXV
Devices
2N5666
2N5666S
2N5667
2N5667S
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
2N5664
2N5665
Symbol 2N5666, S 2N5667, S Unit
V
CEO
V
CBO
V
EBO
I
B
I
C
200
250
6.0
1.0
5.0
2N5664
2N5666, S
2N5665
2N5667, S
2.5
(1)
1.2
(2)
30
(3)
15
(4)
-65 to +200
300
400
Vdc
Vdc
Vdc
Adc
Adc
TO-66* (TO-213AA)
2N5664, 2N5665
@ T
A
= +25
0
C
@ T
C
= +100
0
C
Operating & Storage Junction Temperature Range
1) Derate linearly 14.3 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 6.9 mW/
0
C for T
A
> +25
0
C
3) Derate linearly 300 mW/
0
C for T
C
>+100
0
C
4) Derate linearly 150 mW/
0
C for T
C
> +100
0
C
Total Power Dissipation
P
T
T
J
,
T
stg
W
W
0
C
TO-5*
2N5666, 2N5667
TO-39* (TO-205AD)
2N5666S, 2N5667S
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Emitter-Base Breakdown Voltage
I
E
= 10
碌Adc
Collector-Emitter Cutoff Current
V
CE
= 200 Vdc
V
CE
= 300 Vdc
2N5664, 2N5666, S
2N5665, 2N5667, S
V
(BR)
CER
250
400
6.0
0.2
0.2
Vdc
V
(BR)
EBO
2N5664, 2N5666, S
2N5665, 2N5667, S
I
CES
Vdc
碌Adc
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120101
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