Current鈥揋ain 鈥?Bandwidth Product 鈥?/div>
fT = 10 MHz (Min) @ IC = 50 mAdc
MAXIMUM RATINGS (1)
Rating
PD, POWER DISSIPATION (WATTS)
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Symbol
VCEO
VCB
VEB
IC
IB
2N5655
250
275
2N5657
350
375
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
6.0
0.5
1.0
Collector Current 鈥?Continuous
Peak
Base Current
0.25
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
PD
20
0.16
Watts
W/_C
_C
TJ, Tstg
鈥?5 to +150
3 2
1
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 77鈥?9
TO鈥?25AA TYPE
THERMAL CHARACTERISTICS
Characteristic
Symbol
胃
JC
Max
Unit
Thermal Resistance, Junction to Case
6.25
_C/W
(1) Indicates JEDEC Registered Data.
40
30
50 mH
20
Hg RELAY
+
X
200
TO SCOPE
6.0 V
Y
300
50 V
+
-
10
0
1.0
25
50
75
100
TC, CASE TEMPERATURE (擄C)
125
150
Figure 1. Power Derating
Figure 2. Sustaining Voltage Test Circuit
Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.
漏
Semiconductor Components Industries, LLC, 2002
1
April, 2002 鈥?Rev. 7
Publication Order Number:
2N5655/D
1
2
3
4
