Power Transistors
INCHANGE
2N5609
Silicon PNP Transistors
Features
With TO-66 package
Designed for use as high-frequency drivers in audio amplifier
Absolute Maximum Ratings Tc=25
SYMBOL
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
5.0
25
150
-55~150
RATING
80
80
5.0
UNIT
V
V
V
A
A
W
TO-66
Electrical Characteristics Tc=25
SYMBOL
I
CBO
I
EBO
I
CEO
V
CBO
V
(BR)CEO
V
EBO
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
CEsat-4
h
FE-1
h
FE-2
h
FE-3
h
FE-4
V
BE(sat)1
V
BE(sat)2
V
BE(sat)3
f
T
t
f
t
s
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Base-emitter saturation voltages
Base-emitter saturation voltages
Base-emitter saturation voltages
Transition frequency at f = 1MHz
Fall time
Tum-off storage time
I
C
=1A,V
CE
=2V
1.0
V
I
C
=2.5A,V
CE
=5V
70
200
I
C
=1A; I
B
=0.1A
0.5
V
I
C
=10mA,I
B
=0
80
V
CONDITIONS
V
CB
=80V;I
E
=0
V
EB
=5V, I
C
=0
MIN
MAX
10
10
UNIT
A
A
1
