ON Semiconductort
1 DRAIN
JFET Switching
N鈥揅hannel 鈥?Depletion
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage
Gate鈥揝ource Voltage
Forward Gate Current
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VDG
VGS
IGF
PD
TJ
Tstg
3
GATE
2N5555
2 SOURCE
Value
25
25
25
10
350
2.8
鈥?5 to +150
鈥?5 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
擄C
擄C
1
2
3
CASE 29鈥?1, STYLE 5
TO鈥?2 (TO鈥?26AA)
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate鈥揝ource Breakdown Voltage (IG = 10
碌Adc,
VDS = 0)
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
Drain Cutoff Current (VDS = 12 Vdc, VGS = 鈥?0 V)
Drain Cutoff Current
(VDS = 12 Vdc, VGS = 鈥?0 V, TA = 100擄C)
V(BR)GSS
IGSS
ID(off)
25
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
10
2.0
Vdc
nAdc
nAdc
碌Adc
ON CHARACTERISTICS
Zero鈥揋ate鈥揤oltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0)
Gate鈥揝ource Forward Voltage
(IG(f) = 1.0 mAdc, VDS = 0)
Drain鈥揝ource On鈥揤oltage
(ID = 7.0 mAdc, VGS = 0)
Static Drain鈥揝ource On Resistance
(ID = 0.1 mAdc, VGS = 0)
1. Pulse Test: Pulse Width < 300
碌s,
Duty Cycle < 3.0%.
IDSS
VGS(f)
VDS(on)
rDS(on)
15
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
1.5
150
mAdc
Vdc
Vdc
Ohms
SMALL鈥揝IGNAL CHARACTERISTICS
Small鈥揝ignal Drain鈥揝ource 鈥淥N鈥?Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
rds(on)
Ciss
Crss
鈥?/div>
鈥?/div>
鈥?/div>
150
5.0
1.2
Ohms
pF
pF
SWITCHING CHARACTERISTICS
Turn鈥揙n Delay Time
Rise Time
Turn鈥揙ff Delay Time
Fall Time
(VDD = 10 Vdc, ID(on) = 7.0 mAdc,
(
,
,
VGS(on) = 0, VGS(off) = 鈥?0 Vdc) (See Figure 1)
0
10 Vd ) (S Fi
(
(VDD = 10 Vdc, ID(on) = 7.0 mAdc,
,
,
VGS(on) = 0, VGS(off) = 鈥?0 Vdc) (See Figure 1)
0
10 Vd ) (S Fi
td(on)
tr
td(off)
tf
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5.0
5.0
15
10
ns
ns
ns
ns
漏
Semiconductor Components Industries, LLC, 2001
1
November, 2001 鈥?Rev. 3
Publication Order Number:
2N5555/D
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