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2N5551RLRPG Datasheet

  • 2N5551RLRPG

  • Amplifier Transistors NPN Silicon

  • 89.30KB

  • 6頁

  • ONSEMI

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2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
鈥?/div>
These are Pb鈭扚ree Devices*
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector 鈭?Emitter Voltage
2N5550
2N5551
Collector 鈭?Base Voltage
2N5550
2N5551
Emitter 鈭?Base Voltage
Collector Current 鈭?Continuous
Total Device Dissipation @ T
A
= 25擄C
Derate above 25擄C
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
V
CBO
160
180
6.0
600
625
5.0
1.5
12
鈭?5 to +150
Vdc
mAdc
mW
mW/擄C
W
mW/擄C
擄C
TO鈭?2
CASE 29
STYLE 1
12
1
Symbol
V
CEO
140
160
Vdc
Value
Unit
Vdc
1
EMITTER
2
BASE
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction鈭抰o鈭扐mbient
Thermal Resistance, Junction鈭抰o鈭扖ase
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
擄C/W
擄C/W
2N
555x
AYWW
G
G
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
x
= 0 or 1
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb鈭扚ree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb鈭扚ree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
漏
Semiconductor Components Industries, LLC, 2007
1
March, 2007 鈭?Rev. 5
Publication Order Number:
2N5550/D

2N5551RLRPG 產(chǎn)品屬性

  • 2,000

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN

  • 600mA

  • 160V

  • 200mV @ 5mA，50mA

  • -

  • 80 @ 10mA，5V

  • 625mW

  • 300MHz

  • 通孔

  • TO-226-3、TO-92-3（TO-226AA）成形引線

  • TO-92-3

  • 帶盒（TB）

2N5551RLRPG相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 200MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 200MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | PNP | 4A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 4A I(C) | TO-3
  • 英文版
    TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 3A I(C) | TO-3
  • 英文版
    TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3A I(C) | TO-3
  • 英文版
    DUAL N CHANNEL JFET LOW NOISE AMPLIFIER
    INTERSIL
  • 英文版
    DUAL N CHANNEL JFET LOW NOISE AMPLIFIER
    INTERSIL [...
  • 英文版
    DUAL N CHANNEL JFET LOW NOISE AMPLIFIER
    INTERSIL
  • 英文版
    DUAL N CHANNEL JFET LOW NOISE AMPLIFIER
    INTERSIL [...
  • 英文版
    DUAL N CHANNEL JFET LOW NOISE AMPLIFIER
    INTERSIL
  • 英文版
    DUAL N CHANNEL JFET LOW NOISE AMPLIFIER
    INTERSIL [...
  • 英文版
    DUAL N CHANNEL JFET LOW NOISE AMPLIFIER
    INTERSIL
  • 英文版
    DUAL N CHANNEL JFET LOW NOISE AMPLIFIER
    INTERSIL [...
  • 英文版
    DUAL N CHANNEL JFET LOW NOISE AMPLIFIER
    INTERSIL

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