2N5551RLRPG Datasheet

IC型號(hào)：
2N5551RLRPG
PDF描述：
Amplifier Transistors NPN Silicon
文件大?。?/label>
89.30KB
PDF頁(yè)數(shù)：
6頁(yè)
芯片廠家：
ONSEMI

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2N5550, 2N5551

Preferred Device

Amplifier Transistors

NPN Silicon

Features

鈥?/div>

These are Pb鈭扚ree Devices*

http://onsemi.com

COLLECTOR

MAXIMUM RATINGS

Rating

Collector 鈭?Emitter Voltage

2N5550

2N5551

Collector 鈭?Base Voltage

2N5550

2N5551

Emitter 鈭?Base Voltage

Collector Current 鈭?Continuous

Total Device Dissipation @ T

= 25擄C

Derate above 25擄C

Total Device Dissipation @ T

= 25擄C

Derate above 25擄C

Operating and Storage Junction

Temperature Range

EBO

, T

stg

CBO

160

180

6.0

600

625

5.0

1.5

鈭?5 to +150

Vdc

mAdc

mW/擄C

擄C

TO鈭?2

CASE 29

STYLE 1

Symbol

CEO

140

160

Vdc

Value

Unit

Vdc

EMITTER

BASE

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction鈭抰o鈭扐mbient

Thermal Resistance, Junction鈭抰o鈭扖ase

Symbol

qJA

qJC

Max

200

83.3

Unit

擄C/W

555x

AYWW

MARKING DIAGRAM

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

= 0 or 1

= Assembly Location

= Year

WW = Work Week

= Pb鈭扚ree Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Preferred

devices are recommended choices for future use

and best overall value.

*For additional information on our Pb鈭扚ree strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

漏

Semiconductor Components Industries, LLC, 2007

March, 2007 鈭?Rev. 5

Publication Order Number:

2N5550/D

標(biāo)準(zhǔn)包裝
2,000
類(lèi)別
分離式半導(dǎo)體產(chǎn)品
家庭
晶體管(BJT) - 單路
系列
-
晶體管類(lèi)型
NPN
電流 - 集電極 (Ic)（最大）
600mA
電壓 - 集電極發(fā)射極擊穿（最大）
160V
Ib、Ic條件下的Vce飽和度（最大）
200mV @ 5mA，50mA
電流 - 集電極截止（最大）
-
在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE)
80 @ 10mA，5V
功率 - 最大
625mW
頻率 - 轉(zhuǎn)換
300MHz
安裝類(lèi)型
通孔
封裝/外殼
TO-226-3、TO-92-3（TO-226AA）成形引線
供應(yīng)商設(shè)備封裝
TO-92-3
包裝
帶盒（TB）

2N5551RLRPG相關(guān)型號(hào)PDF文件下載

型號(hào)

版本

描述

廠商

下載
2N550

英文版

TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5

ETC

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2N5551RLRPG Datasheet

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2N5551RLRPG Datasheet

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