2N5545/46/47/JANTX/JANTXV
Vishay Siliconix
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY
Part Number
2N5545
2N5546
2N5547
V
GS(off)
(V)
鈥?.5 to 鈥?.5
鈥?.5 to 鈥?.5
鈥?.5 to 鈥?.5
V
(BR)GSS
Min (V)
鈥?0
鈥?0
鈥?0
g
fs
Min (mS)
1.5
1.5
1.5
I
G
Max (pA)
鈥?0
鈥?0
鈥?0
jV
GS1
鈥?V
GS2
j
Max (mV)
5
10
15
FEATURES
D
D
D
D
D
D
Monolithic Design
High Slew Rate
Low Offset/Drift Voltage
Low Gate Leakage: 3 pA
Low Noise
High CMRR: 100 dB
BENEFITS
D
Tight Differential Match vs. Current
D
Improved Op Amp Speed, Settling Time
Accuracy
D
Minimum Input Error/Trimming Requirement
D
Insignificant Signal Loss/Error Voltage
D
High System Sensitivity
D
Minimum Error with Large Input Signal
APPLICATIONS
D
Wideband Differential Amps
D
High-Speed, Temp-Compensated,
Single-Ended Input Amps
D
High-Speed Comparators
D
Impedance Converters
DESCRIPTION
The 2N5545/5546/5547JANTX/JANTXV are monolithic dual
n-channel JFETs designed to provide high input impedance
(I
G
< 50 pA) for general-purpose differential amplifiers. The
2N5545 features minimum system error and calibration (5 mV
offset maximum).
TO-71
S
1
1
D
1
6
G
2
2
5
D
2
3
G
1
Top View
4
S
2
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Lead Temperature (
1
/
16
鈥?from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5 to 150_C
Power Dissipation :
Per Side
a
. . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Total
b
. . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
Document Number: 70253
S-04031鈥擱ev. C, 04-Jun-01
www.vishay.com
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