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2N5460_06 Datasheet

  • 2N5460_06

  • JFET Amplifier P−Channel − Depletion

  • 5頁

  • ONSEMI

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2N5460, 2N5461, 2N5462
JFET Amplifier
P鈭扖hannel 鈭?Depletion
Features
鈥?/div>
Pb鈭扚ree Packages are Available*
MAXIMUM RATINGS
Rating
Drain 鈭?Gate Voltage
Reverse Gate 鈭?Source Voltage
Forward Gate Current
Total Device Dissipation @ T
A
= 25擄C
Derate above 25擄C
Junction Temperature Range
Storage Channel Temperature Range
Symbol
V
DG
V
GSR
I
G(f)
P
D
T
J
T
stg
Value
40
40
10
350
2.8
鈭?5 to +135
鈭?5 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/擄C
擄C
擄C
http://onsemi.com
2 DRAIN
3
GATE
1 SOURCE
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
12
3
TO鈭?2
CASE 29
STYLE 7
MARKING DIAGRAM
2N
546x
AYWWG
G
2N546x = Device Code
x = 0, 1, or 2
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb鈭扚ree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb鈭扚ree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
漏
Semiconductor Components Industries, LLC, 2006
1
March, 2006 鈭?Rev. 5
Publication Order Number:
2N5460/D

2N5460_06相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | PNP | 3.5A I(C) | STR-8
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 3.5A I(C) | STR-8
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 25MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 25MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 25MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 25MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    PNP Silicon Expitaxial Planar Transistor for general purpose...
    SEMTECH
  • 英文版
    Amplifier Transistor(PNP Silicon)
    MOTOROLA
  • 英文版
    PNP EPITAXIAL SILICON TRANSISTOR
    SAMSUNG

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