MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5460/D
JFET Amplifiers
P鈥揅hannel 鈥?Depletion
3
GATE
2 DRAIN
2N5460
thru
2N5462
1 SOURCE
MAXIMUM RATINGS
Rating
Drain 鈥?Gate Voltage
Reverse Gate 鈥?Source Voltage
Forward Gate Current
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Junction Temperature Range
Storage Channel Temperature Range
Symbol
VDG
VGSR
IG(f)
PD
TJ
Tstg
Value
40
40
10
350
2.8
鈥?65 to +135
鈥?65 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/擄C
擄C
擄C
1
2
3
CASE 29鈥?4, STYLE 7
TO鈥?2 (TO鈥?26AA)
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate 鈥?Source Breakdown Voltage
(IG = 10
碌Adc,
VDS = 0)
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
(VGS = 30 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100擄C)
(VGS = 30 Vdc, VDS = 0, TA = 100擄C)
Gate 鈥?Source Cutoff Voltage
(VDS = 15 Vdc, ID = 1.0
碌Adc)
Gate 鈥?Source Voltage
(VDS = 15 Vdc, ID = 0.1 mAdc)
(VDS = 15 Vdc, ID = 0.2 mAdc)
(VDS = 15 Vdc, ID = 0.4 mAdc)
V(BR)GSS
2N5460, 2N5461, 2N5462
IGSS
2N5460, 2N5461, 2N5462
2N5460, 2N5461, 2N5462
2N5460
2N5461
2N5462
2N5460
2N5461
2N5462
VGS(off)
鈥?/div>
鈥?/div>
0.75
1.0
1.8
0.5
0.8
1.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5.0
1.0
6.0
7.5
9.0
4.0
4.5
6.0
nAdc
碌Adc
Vdc
40
鈥?/div>
鈥?/div>
Vdc
VGS
Vdc
ON CHARACTERISTICS
Zero 鈥?Gate 鈥揤oltage Drain Current
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
2N5460
2N5461
2N5462
IDSS
鈥?1.0
鈥?2.0
鈥?4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?5.0
鈥?9.0
鈥?16
mAdc
SMALL鈥?SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
2N5460
2N5461
2N5462
錚磞
fs
錚?/div>
1000
1500
2000
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5.0
1.0
4000
5000
6000
75
7.0
2.0
m
mhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
錚磞
os
錚?/div>
Ciss
Crss
NF
en
m
mhos
pF
pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = 15 Vdc, VGS = 0, RG = 1.0 Megohm, f = 100 Hz, BW = 1.0 Hz)
Equivalent Short鈥揅ircuit Input Noise Voltage
(VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz)
鈥?/div>
鈥?/div>
1.0
60
2.5
115
dB
nV
Hz
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
2N5460 產(chǎn)品屬性
1,000
分離式半導體產(chǎn)品
JFET（結(jié)點場效應
-
1mA @ 15V
-
-
P 溝道
40V
750mV @ 1µA
7pF @ 15V
-
通孔
散裝
TO-226-3、TO-92-3 標準主體
TO-92-3
350mW
2N5460OS
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