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2N5401RLRA Datasheet

  • 2N5401RLRA

  • Amplifier Transistors

  • 6頁

  • ONSEMI

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上傳產(chǎn)品規(guī)格書

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2N5401
Preferred Device
Amplifier Transistors
PNP Silicon
Features
鈥?/div>
Pb鈭扚ree Packages are Available*
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector 鈭?Emitter Voltage
Collector 鈭?Base Voltage
Emitter 鈭?Base Voltage
Collector Current 鈭?Continuous
Total Device Dissipation
@ T
A
= 25擄C
Derate above 25擄C
Total Device Dissipation
@ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
625
5.0
P
D
1.5
12
T
J
, T
stg
鈭?5 to +150
Watts
mW/擄C
擄C
12
3
mW
mW/擄C
TO鈭?2
CASE 29
STYLE 1
2N5400 2N5401
120
130
5.0
600
150
160
Unit
Vdc
Vdc
Vdc
mAdc
1
EMITTER
2
BASE
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not nor-
mal operating conditions) and are not valid simultaneously. If these limits are ex-
ceeded, device functional operation is not implied, damage may occur and reli-
ability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction鈭抰o鈭扐mbient
Thermal Resistance,
Junction鈭抰o鈭扖ase
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
擄C/W
擄C/W
2N54xx
YWW
Y
WW
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb鈭扚ree strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2004
1
May, 2004 鈭?Rev. 1
Publication Order Number:
2N5401/D

2N5401RLRA 產(chǎn)品屬性

  • 2,000

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • PNP

  • 600mA

  • 150V

  • 500mV @ 5mA，50mA

  • -

  • 60 @ 10mA，5V

  • 625mW

  • 300MHz

  • 通孔

  • TO-226-3、TO-92-3（TO-226AA）成形引線

  • TO-92-3

  • 帶卷 (TR)

  • 2N5401RLRAOSTR

2N5401RLRA相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | PNP | 3.5A I(C) | STR-8
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 3.5A I(C) | STR-8
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 25MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 25MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 25MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 25MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
    ETC
  • 英文版
    PNP Silicon Expitaxial Planar Transistor for general purpose...
    SEMTECH
  • 英文版
    Amplifier Transistor(PNP Silicon)
    MOTOROLA
  • 英文版
    PNP EPITAXIAL SILICON TRANSISTOR
    SAMSUNG

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