B-20
01/99
2N5397, 2N5398
N-Channel Silicon Junction Field-Effect Transistor
樓
樓
樓
樓
樓
樓
Low-Noise
High Power Gain
High Transconductance
Mixers
Oscillators
VHF Amplifiers
Absolute maximum ratings at T
A
= 25隆C
Reverse Gate Source & Reverse Gate Drain Voltage
Drain Source Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
鈥?25 V
25 V
10 mA
300 mW
1.7 mW/擄C
At 25擄C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Source Forward Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source
Forward Transfer Admittance
Common Source Output Conductance
Common Source Input Admittance
Common Source Input Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
g
fs
| Y
fs
|
| g
os
|
| Y
os
|
g
is
C
iss
C
rss
V
(BR)GSS
V
GS(F)
I
GSS
V
GS(OFF)
I
DSS
2N5397
Min
鈥?25
1
鈥?0.1
鈥?0.1
鈥?
10
鈥?
30
Max
2N5398
Min
鈥?25
1
鈥?0.1
鈥?0.1
鈥?
5
鈥?
40
Max
Unit
V
V
nA
碌A(chǔ)
V
mA
Process NJ26L
Test Conditions
I
G
= 鈥?1 碌A(chǔ), V
DS
= 脴V
I
G
= 1 mA, V
DS
= 脴V
V
GS
= 鈥?15V, V
DS
= 脴V
V
GS
= 鈥?15V, V
DS
= 脴V
V
DS
= 10V, I
D
= 1 nA
V
DS
= 10V, V
GS
= 脴V
T
A
= 150擄C
5.5
6
9
10
0.4
0.2
2
5
1.2
5
5.5
10
10
0.5
0.4
3
5.5
1.3
mS
mS
mS
mS
mS
pF
pF
V
DG
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
V
DG
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
V
DG
= 10V, I
D
= 10 mA
V
DG
= 15V, V
GS
= 脴V
V
DG
= 15V, V
GS
= 脴V
f = 450 MHz
f = 1 kHz
f = 450 MHz
f = 1 kHz
f = 450 MHz
f = 1 kHz
f = 1 kHz
TO脨72 Package
Dimensions in Inches (mm)
Surface Mount
SMP5397, SMP5398
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
1
