2N5307
2N5307
NPN General Purpose Amplifier
鈥?This device designed for applications requiring extremely high current
gain at currents to 1.0A.
鈥?Sourced from Process 05.
鈥?See MPSA14 for characteristics.
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings*
T
a
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
ST
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
40
40
12
1.2
-55 ~ +150
Units
V
V
V
A
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
漏2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
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