鈥?/div>
Complements to PNP 2N4398, 2N4399 and 2N5745
* Indicates JEDEC Registered Data.
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
PD, POWER DISSIPATION (WATTS)
. . . for use in power amplifier and switching circuits applications.
High-Power NPN Silicon
Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
*MAXIMUM RATINGS
Thermal Resistance, Case to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Junction
Temperature Range
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
Base Current
Collector Current 鈥?Continuous
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Characteristic
Rating
TA TC
8.0 200
2.0
4.0 100
6.0 150
0
50
Symbol
TJ, Tstg
0
VCEO
VCB
0
PD
IC
IB
Figure 1. Power Temperature Derating Curve
20
Symbol
胃
CA
胃
JC
2N5301
40
30
40
40
60
鈥?65 to + 200
2N5302
80
100 120 140
TEMPERATURE (擄C)
200
1.14
7.5
30
60
60
TC
TA
0.875
Max
34
2N5303
20
80
80
_
C/W
_
C/W
Watts
W/
_
C
Unit
Unit
Adc
Adc
Vdc
Vdc
_
C
160
180
200
20 AND 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 鈥?60 鈥?80 VOLTS
200 WATTS
2N5301
2N5302
2N5303
Order this document
by 2N5301/D
CASE 1鈥?7
TO鈥?04AA
(TO鈥?)
1