2N5245
2N5245
N-Channel RF Amplifier
鈥?This device is designed for HF/VHF mixer/amplifier and applications
where process 50is not adequate. Sufficient gain and low noise for
sensitive receivers.
鈥?Sourced from process 90.
TO-92
1
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings*
T
a
=25擄C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Ratings
30
-30
10
-55 ~ 150
Units
V
V
mA
擄C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)GSS
I
GSS
V
GS(off)
I
DSS
gfs
goss
Parameter
Test Condition
I
G
= 1.0碌A(chǔ), V
DS
= 0
V
GS
= 25V, V
DS
= 0
V
DS
= 15V, I
D
= 1.0nA
V
DS
= 15V, V
GS
= 0
V
GS
= 0V, V
DS
= 15V, f = 1.0kHz
V
GS
= 0V, V
DS
= 15V, f = 1.0kHz
-1.0
5
4500
Min.
-30
-1.0
-0.6
15
11000
50
Max.
Units
V
nA
V
mA
碌mhos
碌mhos
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current *
Forward Transferconductance
Common- Source Output Conductance
On Characteristics
Small Signal Characteristics
* Pulse Test: Pulse
鈮?/div>
300碌s
Thermal Characteristics
T
a
=25擄C unless otherwise noted
Symbol
P
D
R
胃JC
R
胃JA
Parameter
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/擄C
擄C/W
擄C/W
漏2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
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