2N5209 Datasheet

IC型號(hào)：
2N5209
PDF描述：
Amplifier Transistors(NPN Silicon)
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280.85KB
PDF頁數(shù)：
6頁
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ONSEMI

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by 2N5209/D

Amplifier Transistors

NPN Silicon

COLLECTOR

BASE

EMITTER

2N5209

2N5210

MAXIMUM RATINGS

Rating

Collector 鈥?Emitter Voltage

Collector 鈥?Base Voltage

Emitter 鈥?Base Voltage

Collector Current 鈥?Continuous

Total Device Dissipation @ TA = 25擄C

Derate above 25擄C

Total Device Dissipation @ TC = 25擄C

Derate above 25擄C

Operating and Storage Junction

Temperature Range

Symbol

VCEO

VCBO

VEBO

TJ, Tstg

Value

4.0

625

5.0

1.5

鈥?55 to +150

Unit

Vdc

mAdc

mW/擄C

Watts

mW/擄C

擄C

CASE 29鈥?4, STYLE 1

TO鈥?2 (TO鈥?26AA)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to

Ambient

Thermal Resistance, Junction to Case

Symbol

Max

200

83.3

Unit

擄C/W

ELECTRICAL CHARACTERISTICS

(TA = 25擄C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector 鈥?Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

Collector 鈥?Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

Collector Cutoff Current

(VCB = 35 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

V(BR)CEO

V(BR)CBO

ICBO

IEBO

鈥?/div>

Vdc

nAdc

Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data

漏

Motorola, Inc. 1996

制造商
Central Semiconductor
產(chǎn)品種類
Transistors Bipolar (BJT)
晶體管極性
NPN
集電極—發(fā)射極最大電壓 VCEO
50 V
發(fā)射極 - 基極電壓 VEBO
4.5 V
最大直流電集電極電流
0.05 A
直流集電極/Base Gain hfe Min
100 at 100 uA at 5 V
配置
Single
最大工作頻率
30 MHz
最大工作溫度
+ 150 C
安裝風(fēng)格
Through Hole
封裝 / 箱體
TO-92
封裝
Box
最小工作溫度
- 65 C
功率耗散
350 mW
工廠包裝數(shù)量
2500

2N5209相關(guān)型號(hào)PDF文件下載

型號(hào)

版本

描述

廠商

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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | TO-46

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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | TO-46

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HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTOR...

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GESS [GE S...

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25 and 35 Amp RMS SCRs

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2N5209 Datasheet

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