2N5018 SERIES
Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5018
ZERO OFFSET VOLTAGE
LOW ON RESISTANCE
ABSOLUTE MAXIMUM RATINGS
@ 25 擄C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
30V
30V
-50mA
500mW
-55 to 200擄C
-55 to 200擄C
1
SINGLE P-CHANNEL
JFET SWITCH
75鈩?/div>
TO-18
BOTTOM VIEW
G
2
3
D
S
1
STATIC ELECTRICAL CHARACTERISTICS @25 擄C (unless otherwise stated)
SYM.
BV
GSS
V
GS(off)
V
DS(on)
I
DSS
I
GSS
I
D(off)
I
DGO
r
DS(on)
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Drain to Source On Voltage
Drain to Source Saturation Current
Gate Leakage Current
Drain Cutoff Current
Drain Reverse Current
Drain to Source On Resistance
2
TYP
2N5018
MIN
30
10
-0.5
MAX
2N5019
MIN
30
5
-0.5
MAX
UNITS
CONDITIONS
I
G
= 1碌A(chǔ), V
DS
= 0V
V
V
DS
= -15V, I
D
= -1碌A(chǔ)
V
GS
= 0V, I
D
= -6mA
V
GS
= 0V, I
D
= -3mA
V
DS
= -20V, V
GS
= 0V
V
GS
= 15V, V
DS
= 0V
V
DS
= -15V, V
GS
= 12V
V
DS
= -15V, V
GS
= 7V
V
DG
= -15V, I
S
= 0A
I
D
= -1mA, V
GS
= 0V
-10
2
-10
-10
-2
75
-5
2
-10
-10
-2
150
mA
nA
碌A(chǔ)
nA
鈩?/div>
Linear Integrated Systems
鈥?4042 Clipper Court 鈥?Fremont, CA 94538 鈥?Tel: 510 490-9160 鈥?Fax: 510 353-0261
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