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2N4922 Datasheet

  • 2N4922

  • 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS

  • 8頁(yè)

  • ONSEMI

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ON Semiconductor
)
Medium-Power Plastic NPN
Silicon Transistors
. . . designed for driver circuits, switching, and amplifier
applications. These high鈥損erformance plastic devices feature:
2N4921
thru
2N4923 *
*ON Semiconductor Preferred Device
鈥?/div>
Low Saturation Voltage 鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
Excellent Power Dissipation Due to Thermopad Construction 鈥?/div>
PD = 30 W @ TC = 25_C
Excellent Safe Operating Area
Gain Specified to IC = 1.0 Amp
Complement to PNP 2N4918, 2N4919, 2N4920
1 AMPERE
GENERAL鈥揚(yáng)URPOSE
POWER TRANSISTORS
40鈥?0 VOLTS
30 WATTS
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*MAXIMUM RATINGS
Rating
Symbol
VCEO
VCB
VEB
IC
IB
2N4921
40
40
2N4922
60
60
2N4923
80
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
5.0
1.0
3.0
1.0
Collector Current 鈥?Continuous (1)
Base Current 鈥?Continuous
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Operating & Storage Junction
Temperature Range
PD
30
0.24
Watts
W/_C
_C
TJ, Tstg
鈥?5 to +150
3 2
1
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 77鈥?9
TO鈥?25AA TYPE
THERMAL CHARACTERISTICS (2)
Characteristic
Symbol
胃
JC
Max
Unit
Thermal Resistance, Junction to Case
4.16
_C/W
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current handling capability of the
device (see Figures 5 and 6).
(2) Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2002
1
April, 2002 鈥?Rev. 10
Publication Order Number:
2N4921/D

2N4922 產(chǎn)品屬性

  • ON Semiconductor

  • Transistors Bipolar (BJT)

  • NPN

  • 60 V

  • 5 V

  • 1 A

  • 40

  • Single

  • 3 MHz

  • + 150 C

  • Through Hole

  • TO-225-3

  • Bulk

  • 3 A

  • - 65 C

  • 30 W

  • 500

2N4922相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠(chǎng)商
    下載
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
    ETC
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
    ETC
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
    ETC
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
    ETC
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
    ETC
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
  • 英文版
    TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 50MA I(C) | TO-1
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 50MA I(C) | TO-1
  • 英文版
    TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 100V V(BR)CEO | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 100V V(BR)CEO | TO-5
  • 英文版
    TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 50MA I(C) | TO-1
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 50MA I(C) | TO-1

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