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2N4920 Datasheet

  • 2N4920

  • GENERAL.PURPOSE POWER TRANSISTORS

  • 117.64KB

  • 8頁(yè)

  • ONSEMI

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上傳產(chǎn)品規(guī)格書(shū)

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ON Semiconductor
)
Medium-Power Plastic PNP
Silicon Transistors
. . . designed for driver circuits, switching, and amplifier
applications. These high鈥損erformance plastic devices feature:
2N4918
thru
2N4920 *
*ON Semiconductor Preferred Device
鈥?/div>
Low Saturation Voltage 鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
Excellent Power Dissipation Due to Thermopad Construction 鈥?/div>
PD = 30 W @ TC = 25_C
Excellent Safe Operating Area
Gain Specified to IC = 1.0 Amp
Complement to NPN 2N4921, 2N4922, 2N4923
3 AMPERE
GENERAL鈥揚(yáng)URPOSE
POWER TRANSISTORS
40鈥?0 VOLTS
30 WATTS
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*MAXIMUM RATINGS
Ratings
Symbol
VCEO
VCB
VEB
IC*
IB
2N4918
40
40
2N4919
60
60
2N4920
80
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
5.0
1.0
3.0
1.0
Collector Current 鈥?Continuous (1)
Base Current
Total Power Dissipation @ TC = 25擄C
Derate above 25_C
Operating & Storage Junction
Temperature Range
PD
30
0.24
Watts
W/_C
_C
TJ, Tstg
鈥?5 to +150
3 2
1
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 77鈥?9
TO鈥?25AA TYPE
THERMAL CHARACTERISTICS (2)
Characteristic
Symbol
Max
Unit
胃
JC
4.16
_C/W
*Indicates JEDEC Registered Data for 2N4918 Series.
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current鈥揾andling capability of the
device (See Figure 5).
(2) Recommend use of thermal compound for lowest thermal resistance.
Thermal Resistance, Junction to Case
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2002
1
April, 2002 鈥?Rev. 10
Publication Order Number:
2N4918/D

2N4920 產(chǎn)品屬性

  • Central Semiconductor

  • Transistors Bipolar (BJT)

  • PNP

  • 80 V

  • 5 V

  • 1 A

  • 40

  • 3 MHz

  • + 150 C

  • Through Hole

  • TO-126

  • Box

  • 3 A

  • - 65 C

  • 30 W

  • 1000

2N4920相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
    ETC
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
    ETC
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
    ETC
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
    ETC
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
    ETC
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
  • 英文版
    TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 50MA I(C) | TO-1
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 50MA I(C) | TO-1
  • 英文版
    TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 100V V(BR)CEO | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 100V V(BR)CEO | TO-5
  • 英文版
    TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 50MA I(C) | TO-1
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 50MA I(C) | TO-1

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