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2N4918_04 Datasheet

  • 2N4918_04

  • Medium-Power Plastic PNP Silicon Transistors

  • 6頁(yè)

  • ONSEMI

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2N4918 鈭?2N4920* Series
Preferred Device
Medium鈭扨ower Plastic PNP
Silicon Transistors
These medium鈭抪ower, high鈭抪erformance plastic devices are
designed for driver circuits, switching, and amplifier applications.
Features
http://onsemi.com
鈥?/div>
Pb鈭扚ree Package is Available**
鈥?/div>
Low Saturation Voltage 鈭?V
CE(sat)
= 0.6 Vdc (Max) @ I
C
= 1.0 A
鈥?/div>
Excellent Power Dissipation Due to Thermopad Construction,
P
D
= 30 W @ T
C
= 25_C
鈥?/div>
Excellent Safe Operating Area
鈥?/div>
Gain Specified to I
C
= 1.0 A
鈥?/div>
Complement to NPN 2N4921, 2N4922, 2N4923
MAXIMUM RATINGS
Rating
Collector 鈭?Emitter Voltage
2N4918
2N4919
2N4920
Collector 鈭?Base Voltage
2N4918
2N4919
2N4920
Emitter 鈭?Base Voltage
Collector Current 鈭?Continuous
(Note 1)
Base Current
Total Power Dissipation @ T
A
= 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
(Note 2)
I
B
P
D
T
J
, T
stg
V
CBO
40
60
80
5.0
1.0
3.0
1.0
30
0.24
鈭?5 to +150
Vdc
Adc
Adc
W
W/擄C
擄C
Symbol
V
CEO
40
60
80
Vdc
Value
Unit
Vdc
3
3.0 A, 40鈭?0 V, 30 W
GENERAL PURPOSE
POWER TRANSISTORS
TO鈭?25
CASE 077
STYLE 1
2 1
MARKING DIAGRAM
YWW
2N
49xx
xx
Y
WW
= 18, 19, 20
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. The 1.0 A max I
C
value is based upon JEDEC current gain requirements. The
3.0 A max value is based upon actual current鈭抙andling capability of the
device (See Figure 5).
2. Indicates JEDEC Registered Data for 2N4918 Series.
*Preferred
devices are recommended choices for future
use and best overall value.
THERMAL CHARACTERISTICS
(Note 3)
Characteristic
Thermal Resistance,
Junction鈭抰o鈭扖ase
Symbol
qJC
Max
4.16
Unit
擄C/W
3. Recommend use of thermal compound for lowest thermal resistance.
**For additional information on our Pb鈭扚ree strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
漏
Semiconductor Components Industries, LLC, 2004
1
July, 2004 鈭?Rev. 11
Publication Order Number:
2N4918/D

2N4918_04相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
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  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
    ETC
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
    ETC
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
    ETC
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
    ETC
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
    ETC
  • 英文版
    UNIJUNCTION TRANSISTOR|12UA I(P)|TO-5
  • 英文版
    TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 50MA I(C) | TO-1
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 50MA I(C) | TO-1
  • 英文版
    TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-5
  • 英文版
    TRANSISTOR | BJT | NPN | 100V V(BR)CEO | TO-5
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 100V V(BR)CEO | TO-5
  • 英文版
    TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 50MA I(C) | TO-1
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 50MA I(C) | TO-1

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