ON Semiconductort
Amplifier Transistor
NPN Silicon
2N4410
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
80
120
5.0
250
625
5.0
1.5
12
鈥?5 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
1
2
3
CASE 29鈥?1, STYLE 1
TO鈥?2 (TO鈥?26AA)
COLLECTOR
3
2
BASE
1
EMITTER
Symbol
Min
Max
Unit
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 500
碌A(chǔ)dc,
VBE = 5.0 Vdc, RBE = 8.2 k ohms)
Collector鈥揃ase Breakdown Voltage
(IC = 10
碌A(chǔ)dc,
IE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 10
碌A(chǔ)dc,
IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100擄C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
鈮?/div>
300
ms,
Duty Cycle
鈮?/div>
2.0%.
V(BR)CEO
V(BR)CEX
V(BR)CBO
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
IEBO
鈥?/div>
0.01
1.0
0.1
碌A(chǔ)dc
80
120
120
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
Vdc
碌A(chǔ)dc
漏
Semiconductor Components Industries, LLC, 2001
1
November, 2001 鈥?Rev. 11
Publication Order Number:
2N4410/D
next
2N4410 產(chǎn)品屬性
2,000
分離式半導體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
200mA
80V
200mV @ 100µA,1mA
-
60 @ 10mA,1V
625mW
-
通孔
TO-226-3、TO-92-3 標準主體
TO-92-3
散裝
2N4410EBCECG154S0005M
2N4410相關(guān)型號PDF文件下載
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型號
版本
描述
廠商
下載
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英文版
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