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2N4410_01 Datasheet

  • 2N4410_01

  • NPN General Purpose Amplifier

  • 7頁

  • FAIRCHILD

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2N4410
Discrete POWER & Signal
Technologies
2N4410
C
BE
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 50 mA. Sourced
from Process 16. See 2N5551 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25擄C unless otherwise noted
Parameter
Value
80
120
5.0
200
-55 to +150
Units
V
V
V
mA
擄C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JC
R
胃JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
2N4410
625
5.0
83.3
200
Units
mW
mW/擄C
擄C/W
擄C/W
漏
1997 Fairchild Semiconductor Corporation

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