MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N4410/D
Amplifier Transistor
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
2N4410
1
2
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
80
120
5.0
250
625
5.0
1.5
12
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector 鈥?Emitter Breakdown Voltage
(IC = 500
碌A(chǔ)dc,
VBE = 5.0 Vdc, RBE = 8.2 k ohms)
Collector 鈥?Base Breakdown Voltage
(IC = 10
碌A(chǔ)dc,
IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
碌A(chǔ)dc,
IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100擄C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
鈮?/div>
300
m
s, Duty Cycle
鈮?/div>
2.0%.
V(BR)CEO
V(BR)CEX
V(BR)CBO
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
IEBO
鈥?/div>
0.01
1.0
0.1
碌A(chǔ)dc
80
120
120
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
Vdc
碌A(chǔ)dc
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
2N4410/D相關(guān)型號(hào)PDF文件下載
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型號(hào)
版本
描述
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下載
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英文版
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | TO-5
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英文版
TRANSISTOR | BJT | PNP | 15A I(C) | TO-36
ETC
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英文版
TRANSISTOR | BJT | PNP | 15A I(C) | TO-36
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英文版
TRANSISTOR | BJT | PNP | 15A I(C) | TO-36
ETC
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英文版
TRANSISTOR | BJT | PNP | 15A I(C) | TO-36
-
英文版
TRANSISTOR | BJT | PNP | 15A I(C) | TO-36
ETC
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英文版
TRANSISTOR | BJT | PNP | 15A I(C) | TO-36
-
英文版
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | TO-5
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英文版
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | TO-5
-
英文版
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | TO-5
ETC
-
英文版
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | TO-5
-
英文版
TRANSISTOR | BJT | NPN | 6V V(BR)CEO | TO-5
ETC
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英文版
TRANSISTOR | BJT | NPN | 6V V(BR)CEO | TO-5
-
英文版
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 20MA I(C) | TO-22VAR
ETC
-
英文版
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 20MA I(C) | TO-22VAR
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英文版
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 20MA I(C) | TO-22VAR
ETC
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英文版
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 20MA I(C) | TO-22VAR
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英文版
alloy-junction germanium transistors
ETC
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英文版
alloy-junction germanium transistors
ETC [ETC]
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英文版
NPN PNP SILICON PLANAR EPITAXIAL TRANSISTORS
CDIL
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