TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/433
Devices
2N4399
2N5745
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
Symbol
R
胃
JC
R
胃
JA
0
2N4399
60
60
5.0
7.5
30
2N5745
80
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Unit
0
20
@ T
A
=+ 25 C
@ T
C
= +100
0
C
(2)
Operating & Storage Junction Temperature Range
0
(1)
5.0
115
-55 to +200
Max.
3
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance,
Junction-to-Case
Junction-to-Ambient
1)
0
TO-3*
(TO-204AA)
0.875
35
C/W
2)
Derate linearly @ 28.57 mW/ C for T
A
> +25 C
Derate linearly @ 1.15 W/
0
C for T
C
> +100
0
C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc
V
CE
= 80 Vdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc, V
BE
= 1.5 Vdc
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
2N4399
2N5745
2N4399
2N5745
2N4399
2N5745
V
(BR)
CEO
60
80
100
100
5.0
5.0
5.0
Vdc
I
CEO
碌A(chǔ)dc
I
CEX
I
EBO
碌A(chǔ)dc
碌A(chǔ)dc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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