TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/394
Devices
2N4150
2N4150S
2N5237
2N5237S
2N5238
2N5238S
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +100
0
C
(2)
Operating & Storage Junction Temp. Range
2N4150 2N5237 2N5238
Symbol 2N4150S 2N5237S 2N5238S Unit
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
,
T
stg
Symbol
R
胃
JC
R
胃
JA
0
70
100
120
150
10
10
1.0
5.0
-65 to +200
Max.
0.020
170
200
Vdc
Vdc
Vdc
Adc
W
0
TO- 5*
2N4150, 2N5237,
2N5238
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Junction-to-Ambient
1)
0
Unit
0
0.175
C/mW
2)
Derate linearly @ 5.7 mW/ C for T
A
> +25 C
Derate linearly @ 50 mW/
0
C for T
C
> +25
0
C
TO-39*
(TO-205AD)
2N4150S, 2N5237S,
2N5238S
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Emitter-Base Breakdown Voltage
I
E
= 10
碌A(chǔ)dc
Collector-Emitter Breakdown Voltage
I
C
= 0.1 Adc
V
(BR)
EBO
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
V
(BR)
CEO
7.0
70
120
170
10
10
10
Vdc
Vdc
Collector-Emitter Cutoff Current
V
EB
= 0.5 Vdc, V
CE
= 60 Vdc
V
EB
= 0.5 Vdc, V
CE
= 110 Vdc
V
EB
= 0.5 Vdc, V
CE
= 160 Vdc
I
CEX
碌A(chǔ)dc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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