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2N4126_01 Datasheet

  • 2N4126_01

  • PNP General Purpose Amplifier

  • 6頁

  • FAIRCHILD

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2N4126 / MMBT4126
2N4126
MMBT4126
C
E
C
B
TO-92
E
SOT-23
Mark: ZF
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switch-
ing applications at collector currents to 10
碌A(chǔ)
as a switch and to
100 mA as an amplifier.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25擄C unless otherwise noted
Parameter
Value
25
25
4.0
200
-55 to +150
Units
V
V
V
mA
擄C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
胃JC
R
胃JA
TA= 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N4126
625
5.0
83.3
200
Max
*MMBT4126
350
2.8
357
Units
mW
mW/擄C
擄C/W
擄C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
錚?/div>
2001 Fairchild Semiconductor Corporation
2N4126/MMBT4126, Rev A

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