MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3905/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
2N3905
2N3906*
*Motorola Preferred Device
1
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Power Dissipation @ TA = 60擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
PD
TJ, Tstg
Value
40
40
5.0
200
625
5.0
250
1.5
12
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
mW
Watts
mW/擄C
擄C
2
3
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS(1)
Characteristic
Thermal Resistance, Junction to
Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage (2)
(IC = 1.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
1. Indicates Data in addition to JEDEC Requirements.
2. Pulse Test: Pulse Width
300
m
s; Duty Cycle
2.0%.
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
40
40
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
v
v
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
2N3905相關(guān)型號PDF文件下載
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英文版
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
-
英文版
TRANSISTOR | BJT | PNP | 6V V(BR)CEO | 50MA I(C) | TO-24
ETC
-
英文版
TRANSISTOR | BJT | PNP | 6V V(BR)CEO | 50MA I(C) | TO-24
-
英文版
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 200MA I(C) | TO-5
ETC
-
英文版
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 200MA I(C) | TO-5
-
英文版
alloy-junction germanium transistors
ETC
-
英文版
alloy-junction germanium transistors
ETC [ETC]
-
英文版
alloy-junction germanium transistors
ETC
-
英文版
alloy-junction germanium transistors
ETC [ETC]
-
英文版
alloy-junction germanium transistors
ETC
-
英文版
alloy-junction germanium transistors
ETC [ETC]
-
英文版
alloy-junction germanium transistors
ETC
-
英文版
alloy-junction germanium transistors
ETC [ETC]
-
英文版
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | TO-3
ETC
-
英文版
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | TO-3
-
英文版
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 100MA I(C) | TO-98
ETC
-
英文版
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 100MA I(C) | TO-98
-
英文版
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 100MA I(C) | TO-98
ETC
-
英文版
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 100MA I(C) | TO-98
-
英文版
HIGH VOLTAGE NPN SILICON TRANSISTORS
BOCA
1
2
3
4
5
6
