MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3903/D
General Purpose Transistors
NPN Silicon
2N3903
2N3904*
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
40
60
6.0
200
625
5.0
1.5
12
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
CASE 29鈥?4, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS(1)
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage (2)
(IC = 1.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
1. Indicates Data in addition to JEDEC Requirements.
2. Pulse Test: Pulse Width
300
m
s; Duty Cycle
2.0%.
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
40
60
6.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
v
v
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
2N3903/D相關(guān)型號PDF文件下載
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英文版
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
-
英文版
TRANSISTOR | BJT | PNP | 6V V(BR)CEO | 50MA I(C) | TO-24
ETC
-
英文版
TRANSISTOR | BJT | PNP | 6V V(BR)CEO | 50MA I(C) | TO-24
-
英文版
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 200MA I(C) | TO-5
ETC
-
英文版
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 200MA I(C) | TO-5
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英文版
alloy-junction germanium transistors
ETC
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英文版
alloy-junction germanium transistors
ETC [ETC]
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英文版
alloy-junction germanium transistors
ETC
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英文版
alloy-junction germanium transistors
ETC [ETC]
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英文版
alloy-junction germanium transistors
ETC
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英文版
alloy-junction germanium transistors
ETC [ETC]
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英文版
alloy-junction germanium transistors
ETC
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英文版
alloy-junction germanium transistors
ETC [ETC]
-
英文版
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | TO-3
ETC
-
英文版
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | TO-3
-
英文版
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 100MA I(C) | TO-98
ETC
-
英文版
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 100MA I(C) | TO-98
-
英文版
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 100MA I(C) | TO-98
ETC
-
英文版
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 100MA I(C) | TO-98
-
英文版
HIGH VOLTAGE NPN SILICON TRANSISTORS
BOCA
1
2
3
4
5
6
7
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