2N3820
2N3820
P-Channel General Purpose Amplifier
鈥?This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources.
鈥?Sourced from process 89.
1
TO-92
1. Drain 2. Gate 3. Source
Epitaxial Silicon Transistor
Absolute Maximum Ratings*
T
C
=25擄C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Storage Temperature Range
Parameter
Ratings
-20
20
10
-55 ~ 150
Units
V
V
mA
擄C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)GSS
I
GSS
V
GS
(off)
I
DSS
gfs
C
iss
C
rss
Parameter
Test Condition
I
G
= 10碌A(chǔ), V
DS
= 0
V
GS
= 10V, V
DS
= 0
V
DS
= -10V, I
D
= -10碌A(chǔ)
V
DS
= -10V, V
GS
= 0
V
DS
= -10V, V
GS
= 0, f = 1.0KHz
V
DS
= -10V, V
GS
= 0, f = 1.0KHz
V
DS
= -10V, V
GS
= 0, f = 1.0KHz
-0.3
800
Min.
20
20
8.0
-15
5000
32
16
Typ.
Max.
Units
V
nA
V
mA
碌mhos
pF
pF
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current *
Forward Transfer Conductance
Input Capacitance
Reverse Transfer Capacitance
On Characteristics
Small Signal Characteristics
* Pulse Test: Pulse Width
鈮?/div>
300ms, Duty Cycle
鈮?/div>
2%
Thermal Characteristics
T
A
=25擄C unless otherwise noted
Symbol
P
D
R
胃JC
R
胃JA
Parameter
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/擄C
擄C/W
擄C/W
* Device mounted on FR-4 PCB 1.6鈥?/div>
脳
1.6鈥?/div>
脳
0.06鈥?/div>
漏2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002
2N3820 產(chǎn)品屬性
High Voltage Switches for Power Processing
2,000
分離式半導(dǎo)體產(chǎn)品
JFET（結(jié)點(diǎn)場(chǎng)效應(yīng)
-
300µA @ 10V
-
-
P 溝道
20V
8V @ 10µA
32pF @ 10V
-
通孔
散裝
TO-226-3、TO-92-3 標(biāo)準(zhǔn)主體
TO-92-3
350mW
2N3820相關(guān)型號(hào)PDF文件下載
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