2N3819
2N3819
N-Channel RF Amplifier
鈥?This device is designed for RF amplifier and mixer applications
operating up to 450MHz, and for analog switching requiring low
capacitance.
鈥?Sourced from process 50.
TO-92
1
1. Drain 2. Gate 3. Source
Epitaxial Silicon Transistor
Absolute Maximum Ratings*
T
C
=25擄C unless otherwise noted
Symbol
V
DG
V
GS
I
D
I
GF
T
STG
Drain-Gate Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Storage Temperature Range
Parameter
Ratings
25
-25
50
10
-55 ~ 150
Units
V
V
mA
mA
擄C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)GSS
I
GSS
V
GS
(off)
V
GS
I
DSS
gfs
goss
y
fs
C
iss
C
rss
Parameter
Test Condition
I
G
= 1.0碌A(chǔ), V
DS
= 0
V
GS
= -15V, V
DS
= 0
V
DS
= 15V, I
D
= 2.0nA
V
DS
= 15V, I
D
= 200碌A(chǔ)
V
DS
= 15V, V
GS
= 0
V
DS
= 15V, V
GS
= 0, f = 1.0KHz
V
DS
= 15V, V
GS
= 0, f = 1.0KHz
V
DS
= 15V, V
GS
= 0, f = 1.0KHz
V
DS
= 15V, V
GS
= 0, f = 1.0KHz
V
DS
= 15V, V
GS
= 0, f = 1.0KHz
1600
8.0
4.0
-0.5
2.0
2000
Min.
25
2.0
8.0
-7.5
20
6500
50
Typ.
Max.
Units
V
nA
V
V
mA
碌mhos
碌mhos
碌mhos
pF
pF
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Gate-Source Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Conductance
Output Conductance
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
On Characteristics
Small Signal Characteristics
Thermal Characteristics
T
A
=25擄C unless otherwise noted
Symbol
P
D
R
胃JC
R
胃JA
Parameter
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/擄C
擄C/W
擄C/W
* Device mounted on FR-4 PCB 1.5鈥?/div>
脳
1.6鈥?/div>
脳
0.06鈥?/div>
漏2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002
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